DMP3065LVT-13
MOSFET P-CH 30V 5.1A TSOT-26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP3065LVT-13 is a P-Channel MOSFET designed for high-efficiency power management applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 5.1A at 25°C, with a maximum power dissipation of 1.2W (Ta). The DMP3065LVT-13 offers a low on-resistance of 42mOhm at 4.9A and 10V Vgs. It supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 20 nC at 10V and a maximum input capacitance (Ciss) of 880 pF at 15V. The component operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TSOT-26 (SOT-23-6 Thin) surface mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 15 V |
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