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DMP3025LK3-13-01

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DMP3025LK3-13-01

MOSFET P-CH 30V 10.6A TO252

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP3025LK3-13-01 is a P-Channel MOSFET designed for demanding applications. This device features a 30V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (Id) of 16.1A at 25°C ambient temperature, with a maximum power dissipation of 2.15W. The Rds On is specified at 25mOhm maximum at 7.1A, 10V Vgs, and it operates with a gate drive voltage range from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 31.6 nC at 10V and a maximum input capacitance (Ciss) of 1678 pF at 15V. The DMP3025LK3-13-01 is housed in a TO-252-3 (DPAK) surface mount package, facilitating efficient thermal management. This component is suitable for use in power management, automotive, and industrial sectors. It operates across an extended temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C16.1A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 10V
FET Feature-
Power Dissipation (Max)2.15W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1678 pF @ 15 V

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