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DMP3025LK3-13

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DMP3025LK3-13

MOSFET P-CH 30V 10.6A TO252-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP3025LK3-13 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 30V. This component offers a continuous drain current (Id) of 10.6A at 25°C (Ta) and a maximum power dissipation of 2.15W (Ta). The specified Rds On is a maximum of 25mOhm at 7.1A and 10V. Gate drive voltage ranges from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 31.6 nC at 10V and a maximum input capacitance (Ciss) of 1678 pF at 15V. The device features a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Mounted in a TO-252-3 (DPAK) package, this MOSFET is suitable for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). It is supplied on tape and reel. This component is commonly utilized in power management, automotive, and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10.6A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 7.1A, 10V
FET Feature-
Power Dissipation (Max)2.15W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1678 pF @ 15 V

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