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DMP3018SFVQ-7

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DMP3018SFVQ-7

MOSFET P-CH 30V 11A PWRDI3333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP3018SFVQ-7 is a P-Channel MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 11A at ambient temperature and 35A at case temperature, with a maximum power dissipation of 1W (Ta). The low on-resistance of 12mOhm at 11.5A and 10V, coupled with a gate charge of 51 nC at 10V, ensures efficient switching. The DMP3018SFVQ-7 utilizes a PowerDI3333-8 (Type UX) surface mount package, facilitating high-density board designs. It operates across a temperature range of -55°C to 150°C and is AEC-Q101 qualified for automotive applications. This component is suitable for power management, motor control, and battery protection circuits within the automotive industry.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI3333-8 (Type UX)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2147 pF @ 15 V
QualificationAEC-Q101

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