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DMP3018SFVQ-13

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DMP3018SFVQ-13

MOSFET P-CH 30V 11A PWRDI3333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP3018SFVQ-13 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 30V. This automotive-grade component, compliant with AEC-Q101 standards, offers a continuous drain current (Id) of 11A at 25°C ambient and up to 35A at 25°C case temperature. The low on-resistance of 12mOhm is achieved at 11.5A and 10V Vgs, with drive voltages ranging from 4.5V to 10V. Featuring a maximum power dissipation of 1W (Ta), this MOSFET is housed in a PowerDI3333-8 (Type UX) surface mount package. Typical applications include automotive systems and power management solutions. The device exhibits a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 2147 pF at 15V. Operating temperature range is from -55°C to 150°C.

Additional Information

Series: Automotive, AEC-Q101RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2147 pF @ 15 V

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