DMP3017SFGQ-7
MOSFET P-CH 30V 11.5A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMP3017SFGQ-7, a P-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11.5A at 25°C, with a maximum power dissipation of 940mW (Ta). The low on-resistance (Rds On) of 10mOhm at 11.5A and 10V gate-source voltage ensures efficient power transfer. Key parameters include a maximum gate charge (Qg) of 41 nC at 10V and an input capacitance (Ciss) of 2246 pF at 15V. The DMP3017SFGQ-7 is housed in a compact POWERDI3333-8 surface mount package, suitable for operation across a wide temperature range from -55°C to 150°C (TJ). This MOSFET is utilized in various industries, including automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 940mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2246 pF @ 15 V |
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