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DMP3017SFGQ-13

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DMP3017SFGQ-13

MOSFET P-CH 30V 11.5A PWRDI3333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated's DMP3017SFGQ-13 is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage rating and a continuous drain current capability of 11.5A at 25°C. The specified on-resistance (Rds On) is a maximum of 10mOhm at 11.5A and 10V gate drive. With a maximum power dissipation of 940mW (Ta) and an operating temperature range of -55°C to 150°C, it is well-suited for power management solutions. The device utilizes Metal Oxide technology and is housed in a compact POWERDI3333-8 surface mount package, commonly found in automotive and industrial power control systems. Key parameters include a gate charge of 41nC (Max) at 10V and input capacitance of 2246pF (Max) at 15V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)940mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2246 pF @ 15 V

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