DMP3017SFGQ-13
MOSFET P-CH 30V 11.5A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated's DMP3017SFGQ-13 is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage rating and a continuous drain current capability of 11.5A at 25°C. The specified on-resistance (Rds On) is a maximum of 10mOhm at 11.5A and 10V gate drive. With a maximum power dissipation of 940mW (Ta) and an operating temperature range of -55°C to 150°C, it is well-suited for power management solutions. The device utilizes Metal Oxide technology and is housed in a compact POWERDI3333-8 surface mount package, commonly found in automotive and industrial power control systems. Key parameters include a gate charge of 41nC (Max) at 10V and input capacitance of 2246pF (Max) at 15V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 940mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2246 pF @ 15 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
DMN95H2D2HCTI
MOSFET N-CH 950V 6A ITO220AB
