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DMP3017SFG-13

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DMP3017SFG-13

MOSFET P-CH 30V 11.5A PWRDI3333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP3017SFG-13, a P-Channel MOSFET, offers a 30V drain-source breakdown voltage. This device features a low on-resistance of 10mOhm at 11.5A and 10V Vgs, with a continuous drain current rating of 11.5A at 25°C ambient. The DMP3017SFG-13 is housed in a compact POWERDI3333-8 surface mount package, providing a power dissipation of 940mW at 25°C ambient. Key electrical characteristics include a gate charge of 41nC and input capacitance of 2246pF, both specified at typical operating conditions. This MOSFET is engineered for applications demanding efficient power switching in sectors such as automotive, industrial, and consumer electronics. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)940mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2246 pF @ 15 V

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