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DMP3008SFG-13

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DMP3008SFG-13

MOSFET P-CH 30V 8.6A PWRDI3333-8

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated presents the DMP3008SFG-13, a P-Channel MOSFET designed for power management applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 8.6A at 25°C. The Rds(On) is specified at a maximum of 17mOhm at 10A and 10V Vgs. With a gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 2230 pF at 15V, this MOSFET offers efficient switching characteristics. The DMP3008SFG-13 is housed in a compact POWERDI3333-8 package, suitable for surface mounting and enabling high-density designs. Its maximum power dissipation is 900mW at 25°C. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in automotive, industrial, and consumer electronics sectors where robust power control is essential. The drive voltage range is 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.1V at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)
Rds On (Max) @ Id, Vgs17mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2230 pF @ 15 V

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