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DMP2900UWQ-7

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DMP2900UWQ-7

MOSFET BVDSS: 8V~24V SOT323 T&R

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2900UWQ-7 is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 20V. This AEC-Q101 qualified component is presented in a SOT-323 surface mount package, supplied on tape and reel. It offers a continuous drain current of 600mA at 25°C (Ta) and a maximum power dissipation of 300mW. Key electrical parameters include a maximum Rds(On) of 750mOhm at 430mA and 4.5V, and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The device supports gate drive voltages from 1.8V to 4.5V and has a maximum gate-to-source voltage (Vgs) of ±6V. Its low gate charge (Qg) of 0.0007nC at 4.5V and input capacitance (Ciss) of 49pF at 16V make it suitable for various automotive applications. The operating junction temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs750mOhm @ 430mA, 4.5V
FET Feature-
Power Dissipation (Max)300mW
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-323
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±6V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.0007 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds49 pF @ 16 V
QualificationAEC-Q101

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