DMP26M7UFG-13
MOSFET P-CH 20V 18A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMP26M7UFG-13 is a P-Channel MOSFET designed for demanding electronic applications. This device features a 20V drain-to-source breakdown voltage and supports a continuous drain current of 18A at ambient temperature and 40A at case temperature. The DMP26M7UFG-13 exhibits a low on-resistance of 6.7mOhm at 15A and 4.5V, indicative of efficient power handling. Key parameters include a gate charge of 156 nC and input capacitance of 5940 pF, both specified at 10V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in a compact POWERDI3333-8 package for surface mounting, offering a maximum power dissipation of 2.3W at ambient temperature. This component finds application in various sectors including automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5940 pF @ 10 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMT6030LFDF-7
MOSFET N-CH 60V 6.8A 6UDFN
DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323
