DMP2541UCB9-7
MOSFET P-CH 25V 3.9A U-WLB1515-9Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated P-Channel MOSFET, DMP2541UCB9-7, is designed for efficient power switching. This device features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.9A at 25°C. The low on-resistance of 40mOhm is achieved at 2A and 4.5V gate-source voltage (Vgs). Its U-WLB1515-9 WLBGA package offers a compact footprint for space-constrained applications. Key electrical characteristics include a gate charge (Qg) of 7nC at 4.5V and input capacitance (Ciss) of 850pF at 10V. The operating temperature range is -55°C to 155°C. This component is suitable for use in portable electronics and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 940mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | U-WLB1515-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 10 V |
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