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DMP2225L-7

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DMP2225L-7

MOSFET P-CH 20V 2.6A SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2225L-7 is a P-Channel MOSFET designed for efficient power switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C, with a maximum power dissipation of 1.08W. The Rds(On) is specified at 110mOhm maximum at 2.6A and 4.5V gate-source voltage. Gate drive requirements are met with a 2.5V to 4.5V range for Rds(On) specifications, and a typical gate charge (Qg) of 5.3 nC at 4.5V. Input capacitance (Ciss) is a maximum of 250 pF at 10V. The DMP2225L-7 utilizes MOSFET technology and is housed in a compact SOT-23-3 package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control, and automotive systems requiring robust power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 2.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.08W (Ta)
Vgs(th) (Max) @ Id1.25V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs5.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V

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