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DMP21D5UFD-7

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DMP21D5UFD-7

MOSFET P-CH 20V 600MA 3DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated DMP21D5UFD-7 is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) capability of 600mA at 25°C. The device exhibits a maximum Rds(on) of 1 Ohm at 100mA and 4.5V Vgs. Key parameters include a gate charge (Qg) of 0.8 nC maximum at 8V Vgs and an input capacitance (Ciss) of 46.1 pF maximum at 10V Vds. Designed for surface mounting, it is supplied in a 3-UDFN package, specifically the X1-DFN1212-3, and is available on tape and reel. The operating temperature range for this MOSFET is -55°C to 150°C (TJ), with a maximum power dissipation of 400mW (Ta). This component is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-UDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs1Ohm @ 100mA, 4.5V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageX1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds46.1 pF @ 10 V

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