DMP21D5UFD-7
MOSFET P-CH 20V 600MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMP21D5UFD-7 is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) capability of 600mA at 25°C. The device exhibits a maximum Rds(on) of 1 Ohm at 100mA and 4.5V Vgs. Key parameters include a gate charge (Qg) of 0.8 nC maximum at 8V Vgs and an input capacitance (Ciss) of 46.1 pF maximum at 10V Vds. Designed for surface mounting, it is supplied in a 3-UDFN package, specifically the X1-DFN1212-3, and is available on tape and reel. The operating temperature range for this MOSFET is -55°C to 150°C (TJ), with a maximum power dissipation of 400mW (Ta). This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-UDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | X1-DFN1212-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46.1 pF @ 10 V |
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