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DMP213DUFA-7B

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DMP213DUFA-7B

MOSFET P-CH 25V 145MA 3DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP213DUFA-7B is a P-Channel MOSFET designed for efficient power switching applications. This component features a 25V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 145mA at 25°C, with a maximum power dissipation of 360mW. The Rds On is specified at 10Ohm maximum for 200mA with a 4.5V Vgs. Key electrical characteristics include a gate charge (Qg) of 0.35 nC at 4.5V and an input capacitance (Ciss) of 27.2 pF at 10V. The device operates across a temperature range of -55°C to 150°C and is housed in a compact 3-XFDFN package, specifically the X2-DFN0806-3, suitable for surface mounting. This MOSFET is commonly utilized in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C145mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 200mA, 4.5V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageX2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)-8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds27.2 pF @ 10 V

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