DMP210DUFB4-7
MOSFET P-CH 20V 200MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMP210DUFB4-7 is a P-channel MOSFET designed for high-density applications. Featuring a 20V drain-source voltage and a continuous drain current of 200mA at 25°C, this component is housed in a compact 3-XFDFN (X2-DFN1006-3) package. Its low on-resistance of 5 Ohms is specified at 100mA drain current and 4.5V gate-source voltage, with a threshold voltage of 1V at 250µA. The device offers drive voltages ranging from 1.2V to 4.5V and a maximum gate-source voltage of ±10V. Input capacitance is specified at a maximum of 175pF at 15V drain-source voltage. With a power dissipation of 350mW at 25°C, this MOSFET operates across a temperature range of -55°C to 150°C. It is commonly employed in consumer electronics, portable devices, and power management circuits. Supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 15 V |
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