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DMP2079LCA3-7

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DMP2079LCA3-7

MOSFET P-CH 20V 3.4A X4DSN1006-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2079LCA3-7 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20 V. This component features a continuous drain current (Id) of 3.4 A at 25°C (Ta) and a maximum power dissipation of 810 mW. The Rds On is specified at a maximum of 78 mOhm at 500 mA drain current and 8 V gate-source voltage. The device is supplied in a 3-XFDFN package, specifically the X4-DSN1006-3 (Type B) supplier device package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 1.1 nC maximum at 4.5 V and input capacitance (Ciss) of 152 pF maximum at 10 V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power management applications across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs78mOhm @ 500mA, 8V
FET Feature-
Power Dissipation (Max)810mW
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageX4-DSN1006-3 (Type B)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Vgs (Max)-12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds152 pF @ 10 V

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