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DMP2075UVT-7

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DMP2075UVT-7

MOSFET P-CH 20V 3.8A TSOT26 T&R

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2075UVT-7 is a P-Channel MOSFET designed for efficient power management in various applications. This device features a 20V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 3.8A (Ta) at 25°C. The Rds(on) is specified at a maximum of 75mOhm at 4A and 4.5V gate-source voltage. It offers a low gate charge of 8.8 nC (max) at 4.5V and an input capacitance of 642 pF (max) at 10V. Operating within a junction temperature range of -55°C to 150°C, the DMP2075UVT-7 is housed in a compact TSOT-26 package, suitable for surface mounting. The component's specifications make it applicable in areas such as consumer electronics, industrial control, and battery powered devices. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Rds On (Max) @ Id, Vgs75mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTSOT-26
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds642 pF @ 10 V

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