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DMP2075UVT-13

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DMP2075UVT-13

MOSFET P-CH 20V 3.8A TSOT26 T&R

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2075UVT-13 is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 3.8 A at 25°C (Ta). The Rds On is specified at a maximum of 75 mOhm at 4 A and 4.5 V Vgs. Gate charge (Qg) is 8.8 nC maximum at 4.5 V, with input capacitance (Ciss) at 642 pF maximum at 10 V. The device operates over a temperature range of -55°C to 150°C (TJ). Mounting is surface mount, with the component housed in a TSOT-26 package. Maximum power dissipation is 1.2 W (Ta). This MOSFET is suitable for use in consumer electronics and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Rds On (Max) @ Id, Vgs75mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTSOT-26
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds642 pF @ 10 V

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