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DMP2070UQ-13

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DMP2070UQ-13

MOSFET BVDSS: 8V~24V SOT23 T&R 1

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2070UQ-13. This P-Channel MOSFET offers a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 4.6A (Tc). With a maximum power dissipation of 830mW and a low Rds(on) of 44mOhm @ 2A, 4.5V, it is suitable for demanding applications. The device features an input capacitance (Ciss) of 118pF @ 10V and a gate charge (Qg) of 8.2nC @ 8V. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in a compact SOT-23-3 package. This component is AEC-Q101 qualified, making it appropriate for automotive applications, as well as general consumer and industrial electronics. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Rds On (Max) @ Id, Vgs44mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)830mW
Vgs(th) (Max) @ Id950mV @ 250µA
Supplier Device PackageSOT-23-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds118 pF @ 10 V
QualificationAEC-Q101

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