DMP2070UCB6-7
MOSFET P-CH 20V 2.5A U-WLB1510-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMP2070UCB6-7, a P-Channel MOSFET designed for high-density applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A at 25°C. With a low on-resistance of 70mOhm at 1A and 4.5V Vgs, it offers efficient power switching. The DMP2070UCB6-7 is housed in a compact 6-UFBGA, WLBGA package (U-WLB1510-6) suitable for surface mounting. Key electrical characteristics include a maximum power dissipation of 920mW and a gate charge (Qg) of 2.9 nC at 4.5V. This component is utilized in power management solutions, consumer electronics, and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-WLB1510-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 10 V |
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