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DMP2066LVT-13

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DMP2066LVT-13

MOSFET P-CH 20V 4.5A TSOT26

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated DMP2066LVT-13 is a P-Channel MOSFET designed for demanding applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current capability of 4.5A at 25°C. With a maximum Rds(on) of 45mOhm at 4.5A and 4.5V Vgs, it offers efficient power switching. The DMP2066LVT-13 operates with gate drive voltages from 2.5V to 4.5V and has a gate charge (Qg) of 14.4 nC at 4.5V. Its input capacitance (Ciss) is rated at a maximum of 1496 pF at 15V. Packaged in a compact TSOT-23-6, this MOSFET is suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Power dissipation is 1.2W at 25°C. This component is utilized in various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 4.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageTSOT-23-6
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1496 pF @ 15 V

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