DMP2036UVT-7
MOSFET P-CH 20V 6A TSOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP2036UVT-7 is a P-Channel MOSFET designed for high-efficiency power management. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 6A at 25°C ambient. The DMP2036UVT-7 offers a low on-resistance (Rds On) of 30mOhm maximum at 6.4A and 4.5V gate-source voltage, facilitating minimal power loss. It supports a wide range of drive voltages, from 1.8V to 4.5V, with a threshold voltage (Vgs(th)) of 1V at 250µA. Featuring a maximum gate charge (Qg) of 20.5 nC at 4.5V and input capacitance (Ciss) of 1808 pF at 15V, it is optimized for fast switching applications. The component is housed in a compact TSOT-26 package, suitable for surface mounting. With a power dissipation of 1.1W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is well-suited for use in consumer electronics, communication systems, and automotive applications requiring robust performance. The DMP2036UVT-7 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1808 pF @ 15 V |
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