DMP2033UVT-13
MOSFET P-CH 20V 4.2A TSOT-26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP2033UVT-13 is a P-Channel MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.2A at 25°C. The device exhibits a maximum on-resistance of 65mOhm at 4.2A and 4.5V gate-source voltage, with a threshold voltage of 900mV at 250µA. Key parameters include a gate charge of 10.4nC at 4.5V and an input capacitance of 845pF at 15V. The DMP2033UVT-13 is housed in a compact TSOT-26 surface-mount package, allowing for efficient thermal management with a maximum power dissipation of 1.2W. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for various industrial and consumer electronics applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 15 V |
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