DMP2033UCB9-7
MOSFET P-CH 20V 4.2A U-WLB1515-9Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's DMP2033UCB9-7 is a P-Channel MOSFET designed for high-density power management solutions. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.2A at 25°C. The device exhibits a low on-resistance of 33mOhm maximum at 2A and 4.5V Vgs, ensuring efficient power transfer with minimal dissipation. It supports gate drive voltages ranging from 1.8V to 4.5V, with a threshold voltage of 1.1V maximum at 250µA. The DMP2033UCB9-7 is housed in a compact U-WLB1515-9 package, suitable for space-constrained applications. This MOSFET is typically employed in consumer electronics, mobile devices, and power supply circuits where efficient switching and small form factor are critical. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | U-WLB1515-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
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