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DMP2033UCB9-7

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DMP2033UCB9-7

MOSFET P-CH 20V 4.2A U-WLB1515-9

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated's DMP2033UCB9-7 is a P-Channel MOSFET designed for high-density power management solutions. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 4.2A at 25°C. The device exhibits a low on-resistance of 33mOhm maximum at 2A and 4.5V Vgs, ensuring efficient power transfer with minimal dissipation. It supports gate drive voltages ranging from 1.8V to 4.5V, with a threshold voltage of 1.1V maximum at 250µA. The DMP2033UCB9-7 is housed in a compact U-WLB1515-9 package, suitable for space-constrained applications. This MOSFET is typically employed in consumer electronics, mobile devices, and power supply circuits where efficient switching and small form factor are critical. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-UFBGA, WLBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Rds On (Max) @ Id, Vgs33mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageU-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)-6V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 10 V

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