DMP2016UFDF-13
MOSFET BVDSS: 8V~24V U-DFN2020-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP2016UFDF-13 is a P-Channel MOSFET designed for high-efficiency power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 9.5A at 25°C, with a maximum power dissipation of 900mW. The low on-resistance of 15mOhm at 7A and 4.5V Vgs, coupled with a gate charge of 30 nC, ensures minimal power loss during switching.
The DMP2016UFDF-13 utilizes a U-DFN2020-6 (Type F) surface-mount package, offering a compact footprint suitable for demanding portable electronics and consumer devices. It operates across a wide temperature range of -55°C to 150°C. The MOSFET is compatible with drive voltages from 1.5V to 4.5V and has a maximum gate-source voltage (Vgs) of ±8V. Its input capacitance (Ciss) is a maximum of 1710 pF at 10V. This device is commonly employed in battery management systems and power delivery circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 10 V |
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