DMP2008USS-13
MOSFET BVDSS: 8V~24V SO-8 T&R 2.Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP2008USS-13 is a P-Channel MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current capability of 13A at ambient temperature (Ta) and 38A at case temperature (Tc). The Rds On is specified at a maximum of 9mOhm at 12A and 4.5V gate drive. It supports a range of drive voltages from 1.8V to 4.5V and a gate-source voltage (Vgs) tolerance up to ±8V. With a maximum power dissipation of 1.4W (Ta), this MOSFET is suitable for operation between -55°C and 150°C. The DMP2008USS-13 is presented in an 8-SOIC package and supplied in Tape & Reel (TR) format. This component finds utility in various applications including consumer electronics and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 159 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6820 pF @ 10 V |
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