DMP2006UFG-7
MOSFET P-CH 20V 17.5A POWERDIManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMP2006UFG-7 is a P-Channel MOSFET designed for power management applications. This device features a 20V drain-source breakdown voltage and supports continuous drain currents of 17.5A at ambient temperature and 40A at case temperature. Its low on-resistance of 5.2mOhm at 15A and 4.5V gate drive, coupled with a maximum gate charge of 140 nC at 10V, ensures efficient switching. The DMP2006UFG-7 is housed in a compact 8-PowerVDFN (POWERDI3333-8) surface-mount package, rated for operation from -55°C to 150°C. With a maximum power dissipation of 2.3W (Ta), this MOSFET is suitable for use in automotive, consumer electronics, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5404 pF @ 10 V |
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