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DMP2006UFG-7

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DMP2006UFG-7

MOSFET P-CH 20V 17.5A POWERDI

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated DMP2006UFG-7 is a P-Channel MOSFET designed for power management applications. This device features a 20V drain-source breakdown voltage and supports continuous drain currents of 17.5A at ambient temperature and 40A at case temperature. Its low on-resistance of 5.2mOhm at 15A and 4.5V gate drive, coupled with a maximum gate charge of 140 nC at 10V, ensures efficient switching. The DMP2006UFG-7 is housed in a compact 8-PowerVDFN (POWERDI3333-8) surface-mount package, rated for operation from -55°C to 150°C. With a maximum power dissipation of 2.3W (Ta), this MOSFET is suitable for use in automotive, consumer electronics, and industrial power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 15A, 4.5V
FET Feature-
Power Dissipation (Max)2.3W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5404 pF @ 10 V

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