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DMP2006UFG-13

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DMP2006UFG-13

MOSFET P-CH 20V 17.5A POWERDI

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2006UFG-13 is a P-Channel Power MOSFET designed for efficient power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and supports a continuous drain current of 17.5A at ambient temperature and 40A at case temperature. The low on-resistance (Rds On) of 5.5mOhm at 15A and 4.5V gate drive, coupled with a maximum gate charge of 200 nC, ensures high switching efficiency. The DMP2006UFG-13 is housed in a compact 8-PowerVDFN (POWERDI3333-8) package, facilitating high-density board designs. Its surface mount capability and an operating temperature range of -55°C to 150°C make it suitable for demanding environments across various industries, including automotive and industrial automation. The maximum power dissipation is rated at 2.3W at ambient temperature. This component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 15A, 4.5V
FET Feature-
Power Dissipation (Max)2.3W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 10 V

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