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DMP2004KQ-7

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DMP2004KQ-7

DIODE

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP2004KQ-7 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20 V. This device offers a continuous drain current (Id) of 600mA at 25°C with a maximum power dissipation of 550mW. It features a low Rds(on) of 900mOhm at 430mA and 4.5V Vgs. The DMP2004KQ-7 is specified for a gate-source voltage range of ±8V and exhibits a gate threshold voltage (Vgs(th)) of 1V at 250µA. This MOSFET is designed for surface mounting in the SOT-23-3 package. Key applications include power management and switching circuits in industrial and consumer electronics. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs900mOhm @ 430mA, 4.5V
FET Feature-
Power Dissipation (Max)550mW
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 16 V

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