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DMP1096UCB4-7

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DMP1096UCB4-7

MOSFET P-CH 12V 2.6A U-WLB1010-4

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP1096UCB4-7 is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 2.6A at 25°C, with a maximum power dissipation of 820mW. The On-Resistance (Rds On) is specified at a maximum of 102mOhm at 500mA and 4.5V gate-source voltage. The DMP1096UCB4-7 utilizes advanced MOSFET technology and is housed in a compact U-WLB1010-4 package, suitable for surface mounting. It offers a gate charge (Qg) of 3.7 nC at 4.5V and an input capacitance (Ciss) of 251 pF at 6V. Operating temperature ranges from -55°C to 150°C. This device is commonly employed in consumer electronics and power management solutions. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-UFBGA, WLBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs102mOhm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)820mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageU-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)-5V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds251 pF @ 6 V

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