DMP1081UCB4-7
MOSFET P-CH 12V 3A U-WLB1010-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated P-Channel MOSFET, DMP1081UCB4-7, offers 12V drain-source voltage and up to 3.3A continuous drain current at 25°C. This device features a low Rds(on) of 10 Ohms maximum at 100mA and 0.9V Vgs. The U-WLB1010-4 package ensures efficient thermal performance with 820mW maximum power dissipation. Key electrical characteristics include 350pF maximum input capacitance at 6V Vds and 5nC gate charge at 4.5V Vgs. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 0.9V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 650mV @ 250µA |
| Supplier Device Package | U-WLB1010-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 0.9V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 6 V |
| Qualification | - |
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