DMP1080UCB4-7
MOSFET P-CH 12V 3.3A U-WLB1010-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP1080UCB4-7 is a P-Channel MOSFET designed for efficient power switching. This component features a drain-source breakdown voltage (Vdss) of 12V and a continuous drain current (Id) of 3.3A at 25°C. The Rds(On) is specified at a maximum of 80mOhm at 500mA and 4.5V gate-source voltage. With a maximum power dissipation of 820mW, it is suitable for compact power management applications. The DMP1080UCB4-7 utilizes a U-WLB1010-4 package, a 4-UFBGA, WLBGA type, for surface mounting. Key electrical characteristics include a gate charge (Qg) of 5 nC maximum at 4.5V and input capacitance (Ciss) of 350 pF maximum at 6V. The operating temperature range is from -55°C to 150°C. This MOSFET is commonly found in consumer electronics and mobile device power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-WLB1010-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 6 V |
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