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DMP1022UWS-13

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DMP1022UWS-13

MOSFET P-CH 12V 7.2A 8DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP1022UWS-13 is a high-performance P-channel MOSFET designed for demanding applications. This component features a 12V Vds rating and a continuous drain current capability of 7.2A at 25°C. The Rds(on) is specified at a maximum of 18mOhm when driven at 4.5V with a drain current of 9A. The device is housed in an 8-VDFN package (V-DFN3020-8) suitable for surface mounting and is supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 30 nC at 5V and an input capacitance (Ciss) of 2847 pF at 4V Vds. With a maximum power dissipation of 900mW (Ta), this MOSFET operates across a temperature range of -55°C to 150°C. It finds utility in power management and switching applications across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.2A (Ta)
Rds On (Max) @ Id, Vgs18mOhm @ 9A, 4.5V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageV-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2847 pF @ 4 V

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