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DMP1022UFDE-7

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DMP1022UFDE-7

MOSFET P-CH 12V 9.1A 6UDFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP1022UFDE-7 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 9.1A at 25°C (Ta). This component features a low on-resistance (Rds On) of 16mOhm at 8.2A and 4.5V Vgs, with a maximum power dissipation of 660mW (Ta). The device operates with drive voltages from 1.2V to 4.5V and has a gate charge (Qg) of 42.6 nC at 5V. Its input capacitance (Ciss) is a maximum of 2953 pF at 4V. Encased in a compact 6-UDFN-2020-6 (Type E) package, it is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management applications, consumer electronics, and battery-powered devices. It is supplied on a tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.1A (Ta)
Rds On (Max) @ Id, Vgs16mOhm @ 8.2A, 4.5V
FET Feature-
Power Dissipation (Max)660mW (Ta)
Vgs(th) (Max) @ Id800mV @ 250µA
Supplier Device PackageU-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2953 pF @ 4 V

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