DMP1018UCB9-7
MOSFET P-CH 12V 7.6A U-WLB1515-9Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP1018UCB9-7 is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 7.6A at 25°C (Ta). With a low on-resistance (Rds On) of 18mOhm at 2A and 4.5V, it minimizes conduction losses. The MOSFET is housed in a compact 9-UFBGA, WLBGA package, suitable for space-constrained designs. Key parameters include a gate charge (Qg) of 4.9 nC at 4.5V and input capacitance (Ciss) of 457 pF at 6V. Operating across a temperature range of -55°C to 150°C (TJ), this component is utilized in power management circuits across various industries. The device supports drive voltages from 2.5V to 4.5V and has a maximum gate-source voltage (Vgs) of -6V. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | U-WLB1515-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 457 pF @ 6 V |
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