DMP1012USS-13
MOSFET BVDSS: 8V-24V SO-8 T&R 2.Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated P-Channel MOSFET, DMP1012USS-13, offers a 12V drain-to-source breakdown voltage and a continuous drain current of 8.5A at 25°C ambient. This device features a low on-resistance of 15mOhm maximum at 9A and 4.5V gate-source voltage. With a gate charge of 19.5 nC at 4.5V and input capacitance of 1344 pF at 10V drain-source voltage, it is suitable for power management applications. The DMP1012USS-13 operates across a temperature range of -55°C to 150°C. It is supplied in a Tape & Reel package. This component finds application in various industries, including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1344 pF @ 10 V |
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