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DMP1012UFDF-13

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DMP1012UFDF-13

MOSFET P-CH 12V 12.6A/20A 6UDFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP1012UFDF-13 is a P-Channel MOSFET designed for efficient power switching. This component features a drain-to-source voltage (Vdss) of 12V and offers continuous drain current ratings of 12.6A at ambient temperature (Ta) and 20A at case temperature (Tc). The Rds On is specified at a maximum of 15mOhm at 5A and 4.5V, with drive voltages ranging from 1.8V to 4.5V. Key parameters include a gate charge (Qg) of 31 nC at 8V and input capacitance (Ciss) of 1344 pF at 10V. The device is housed in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) package, suitable for surface mounting. Maximum power dissipation is 720mW at ambient temperature. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in applications such as battery management, power supplies, and load switching across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12.6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)720mW (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageU-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1344 pF @ 10 V

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