DMP1012UCB9-7
MOSFET P-CH 8V 10A U-WLB1515-9Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP1012UCB9-7, a P-Channel MOSFET, offers a 8V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. This device features a low on-resistance (Rds On) of 10mOhm at 2A, 4.5V Vgs. The DMP1012UCB9-7 is supplied in a compact U-WLB1515-9 package, suitable for surface mounting applications. Key electrical characteristics include a gate charge (Qg) of 10.5 nC at 4.5V and input capacitance (Ciss) of 1060 pF at 4V. With a maximum power dissipation of 890mW (Ta), this MOSFET is designed for operation across a temperature range of -55°C to 150°C. It is commonly deployed in portable electronics and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | U-WLB1515-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | -6V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 4 V |
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