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DMP1009UFDFQ-13

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DMP1009UFDFQ-13

MOSFET P-CH 12V 11A 6UDFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP1009UFDFQ-13 is a P-Channel MOSFET designed for automotive applications, meeting AEC-Q101 qualification. This component features a Drain-to-Source Voltage (Vdss) of 12 V and a continuous drain current (Id) of 11A at 25°C. Its low on-resistance, specified at 11mOhm @ 5A, 4.5V, is achieved with a gate drive voltage range of 1.8V to 4.5V. The device exhibits a maximum gate charge (Qg) of 44 nC at 8 V and an input capacitance (Ciss) of 1860 pF at 10 V. With a power dissipation of 2W (Ta), it is housed in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) package, suitable for surface mounting. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageU-DFN2020-6 (Type F)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 10 V
QualificationAEC-Q101

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