DMNH6042SPD-13
MOSFET N-CH 60V 25A PWRDI5060Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMNH6042SPD-13 is a N-Channel MOSFET designed for high-performance applications. This component features a Drain to Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 5.7A at 25°C ambient, scaling to 24A at 25°C case temperature. The Rds On is specified at a maximum of 50mOhm at 5.1A and 10V gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 8.8 nC at 10V and input capacitance (Ciss) up to 584 pF at 25V. Operating from a gate drive range of 4.5V to 10V, this MOSFET supports a maximum gate-source voltage (Vgs) of ±20V. The device is housed in a PowerDI5060-8 package, enabling efficient surface mounting. With a maximum power dissipation of 1.2W (Ta) and an operating temperature range of -55°C to 175°C, the DMNH6042SPD-13 is qualified to AEC-Q101 standards, making it suitable for automotive and demanding industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI5060-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 25 V |
| Qualification | AEC-Q101 |
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