DMNH6008SPSWQ-13
MOSFET BVDSS: 41V~60V POWERDI506Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, DMNH6008SPSWQ-13, offers a 60V Vdss rating and a continuous drain current capability of 16.5A (Ta) and 88A (Tc). This AEC-Q101 qualified component features a low Rds(on) of 8mOhm at 20A, 10V, and a gate charge of 40.1 nC (max) at 10V. Designed for surface mounting, it utilizes the wettable flank PowerDI5060-8 (Type UX) package, facilitating automated assembly. With a maximum power dissipation of 1.6W and an operating temperature range of -55°C to 175°C, this device is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta), 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2597 pF @ 30 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
DMN95H2D2HCTI
MOSFET N-CH 950V 6A ITO220AB
