DMNH4005SCTQ
MOSFET N-CH 40V 150A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMNH4005SCTQ is an N-Channel Power MOSFET in a TO-220-3 package. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Current (Id) of 150A at 25°C (Tc), with a maximum power dissipation of 165W (Tc). The on-resistance (Rds On) is specified at a maximum of 4mOhm at 20A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 48 nC (Max) at 10V and input capacitance (Ciss) of 2846 pF (Max) at 20V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2846 pF @ 20 V |
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