DMNH15H110SPS-13
MOSFET BVDSS: 101V~250V POWERDI5Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMNH15H110SPS-13 is a N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 27A (Tc), this component is suitable for power management and switching circuits. It offers low on-resistance with a maximum of 90mOhm at 2A, 2A, and 10V, facilitated by a gate drive range of 6V to 10V. The device boasts a low gate charge (Qg) of 25.5 nC at 10V and input capacitance (Ciss) of 989 pF at 75V, contributing to efficient switching performance. Packaged in an 8-PowerTDFN (PowerDI5060-8) for surface mounting, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial automation, automotive systems, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerDI5060-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 989 pF @ 75 V |
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