DMNH15H110SK3-13
MOSFET BVDSS: 101V~250V TO252 T&Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMNH15H110SK3-13 is an N-Channel MOSFET designed for robust power management applications. Featuring a Drain-Source voltage (Vdss) of 150V and a continuous drain current (Id) capability of 18A (Tc), this component is suitable for demanding environments. Its low on-resistance (Rds On) of 97mOhm at 2A and 10V Vgs ensures efficient power transfer. The device is housed in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating integration into compact designs. With a maximum power dissipation of 2W (Ta) and an operating temperature range of -55°C to 175°C (TJ), it offers reliable performance. Key electrical parameters include a gate charge (Qg) of 25.5 nC at 10V and input capacitance (Ciss) of 987 pF at 75V. This MOSFET is utilized in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 97mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 75 V |
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