DMNH10H028SPSWQ-13
MOSFET BVDSS: 61V~100V POWERDI50Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMNH10H028SPSWQ-13 is an N-Channel MOSFET designed for demanding automotive applications. This device features a maximum Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 40 A at 25°C (Tc). The low on-resistance of 28 mOhm at 20 A and 10 V gate drive ensures efficient power transfer. With a maximum power dissipation of 1.6 W and an operating temperature range of -55°C to 175°C, it is suitable for thermally challenging environments. The 8-PowerTDFN package, specifically the PowerDI5060-8 (Type UX) with wettable flanks, facilitates robust surface mount assembly. Key parameters include a gate charge (Qg) of 36 nC at 10 V and input capacitance (Ciss) of 2245 pF at 50 V. This component is AEC-Q101 qualified.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2245 pF @ 50 V |
| Qualification | AEC-Q101 |
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