DMN95H8D5HCTI
MOSFET N-CHANNEL 950V ITO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMN95H8D5HCTI, offers a 950V drain-source breakdown voltage. This device features a continuous drain current capability of 2.5A (Tc) and a maximum power dissipation of 30W (Tc). The DMN95H8D5HCTI is presented in an isolated ITO-220AB package, suitable for through-hole mounting. Key electrical characteristics include a maximum Rds(On) of 7 Ohm at 1A and 10V Vgs, with a typical gate charge of 7.9 nC at 10V. Input capacitance (Ciss) is rated at 470 pF at 25V. This component is engineered for applications requiring high voltage switching, often found in power supply units, lighting, and industrial motor control. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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