DMN95H8D5HCT
MOSFET N-CH 950V 2.5A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel Power MOSFET, part number DMN95H8D5HCT, features a 950V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C. This device offers a maximum Rds(on) of 7 Ohm at 1A and 10V, with a gate threshold voltage (Vgs(th)) of 5V at 250µA. The typical input capacitance (Ciss) is 470 pF at 25V, and the gate charge (Qg) is 7.9 nC at 10V. With a maximum power dissipation of 125W at 25°C (case), this MOSFET is housed in a TO-220AB (Type TH) package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). Applications commonly found for this component include power supply units, industrial motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
BSS123W-7
MOSFET N-CH 100V 170MA SOT323
