DMN90H8D5HCT
MOSFET N-CH 900V 2.5A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN90H8D5HCT is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 2.5 A at 25°C. The device offers a low on-resistance (Rds On) of 7 Ohm maximum at 1 A, 10 V, contributing to efficient power handling with a maximum power dissipation of 125 W (Tc). Key parameters include a gate charge (Qg) of 7.9 nC maximum at 10 V and input capacitance (Ciss) of 470 pF maximum at 25 V. The DMN90H8D5HCT is housed in a standard TO-220-3 through-hole package, suitable for robust thermal management. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |