DMN7022LFGQ-7
MOSFET N-CH 75V 23A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's N-Channel MOSFET, part number DMN7022LFGQ-7, is a high-performance power semiconductor designed for demanding applications. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 23A at 25°C (Tc). The DMN7022LFGQ-7 utilizes Metal Oxide technology and is housed in an 8-PowerVDFN package, specifically the POWERDI3333-8 footprint, for efficient surface mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 22mOhm at 7.2A and 10V, and a gate charge (Qg) of 56.5 nC at 10V. The input capacitance (Ciss) is a maximum of 2737 pF at 35V. With a maximum power dissipation of 2W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power management, automotive, and industrial automation systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 56.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2737 pF @ 35 V |
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